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SIR182DP-T1-RE3 Datasheet
Datasheet specifications
| Datasheet's name | SIR182DP-T1-RE3 |
|---|---|
| File size | 105.644 KB |
| File type | |
| Number of pages | 13 |
Download Datasheet SIR182DP-T1-RE3 |
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SIR182DP-T1-RE3
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 69.4W
- Total Gate Charge (Qg@Vgs): 64nC@10V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 3250pF@30V
- Continuous Drain Current (Id): 60A
- Gate Threshold Voltage (Vgs(th)@Id): 3.6V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.8mΩ@10V,15A
- Package: PowerPAK-SO-8
- Manufacturer: Vishay Intertech